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芯片衰減器

關鍵性性能參數

集成電(dian)路芯片衰(shuai)減(jian)器,極(ji)限(xian)250瓦(wa)，極(ji)限(xian)18 GHz，標衰(shuai)減(jian)器在大多數工作(zuo)溫(wen)(wen)下(xia)勻稱(cheng)等地大大減(jian)少RF熱效率(lv)，而工作(zuo)溫(wen)(wen)可變性集成電(dian)路板(ban)集成塊設計的為在低溫(wen)(wen)下(xia)壓縮其衰(shuai)減(jian)，以(yi)(yi)展示訊號(hao)調(diao)平軟件(jian)(jian)軟件(jian)(jian)營養的最(zui)加出錯(cuo)。條狀(zhuang)衰(shuai)減(jian)器軟件(jian)(jian)于調(diao)大器電(dian)路板(ban)，收到(dao)器，上/下(xia)變換器，相(xiang)位匹配好(hao)陣(zhen)列和按(an)鈕開關軟件(jian)(jian)軟件(jian)(jian)。依據營養的規(gui)模，就可以(yi)(yi)在包含(han)薄或(huo)厚電(dian)阻(zu)功(gong)率(lv)的BeO，氮(dan)化鋁(lv)或(huo)被三氧化二鋁(lv)陶瓷(ci)制品上研(yan)發集成電(dian)路板(ban)集成塊。

品牌：MACOM

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IC芯片衰減器

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
1KNA250	250	1	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.375	0.040
	100	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.350	0.225	0.040
	150	1.9	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.250	0.040
2KNA250	250	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.500	0.500	0.040
3KNA100	100	3	AlN	Thin	G, Tabbed	N, T, H	0.375	0.250	0.040
	10	4	BeO	Thin	G	N, T, H	0.100	0.200	0.040
	100	0.5	BeO	Thin	G	N, T, H	0.500	0.500	0.40
	20	4	BeO	Thin	G	N, T, H	0.250	0.250	0.040
	50	1	BeO	Thin	G	N, T, H	0.375	0.375	0.040
	1.5	12.4	Alumina	Thin		N, T, H, G	0.125	0.150	0.010
	0.75	18	Alumina	Thin		N, T, H, G	0.060	0.075	0.010
	0.75	8	Alumina	Thin	F	N, T, H, G	0.060	0.075	0.010
	0.75	18	Alumina	Thin	Tabbed	G, T, H	0.060	0.075	0.040
	0.75	18	Alumina	Thin	W	N, T, H, G	0.060	0.075	0.010
	1.5	4	Alumina	Thin	F	N, T, H, G	0.125	0.150	0.010
	1.5	12.4	Alumina	Thin	Tabbed	G, T, H	0.125	0.150	0.040
	1.5	12.4	Alumina	Thin	W	N, T, H, G	0.125	0.150	0.010
	100	0.4	BeO	Thin	G	N, T, H	0.500	0.500	0.040