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MABC-001000-DPS00L不(bu)(bu)是(shi)款低額(e)定(ding)功率(lv)偏(pian)置(zhi)(zhi)(zhi)把控好器(qi)，能(neng)夠(gou)為(wei)被測電(dian)(dian)子元件(jian)（DUT）出具最合(he)適(shi)的柵極(ji)(ji)相(xiang)(xiang)交流(liu)電(dian)(dian)壓(ya)(ya)和(he)激(ji)光脈(mo)沖(chong)漏極(ji)(ji)相(xiang)(xiang)交流(liu)電(dian)(dian)壓(ya)(ya)偏(pian)置(zhi)(zhi)(zhi)。使用(yong)的DUT是(shi)指吸引型GaN（氮化(hua)鎵）或(huo)GaAs（砷化(hua)鎵）馬力(li)拖(tuo)動(dong)器(qi)或(huo)HEMT元器(qi)件(jian)封裝。該(gai)功能(neng)模塊還保證偏(pian)置(zhi)(zhi)(zhi)編排(pai)，那么不(bu)(bu)可能(neng)來源于負柵極(ji)(ji)偏(pian)置(zhi)(zhi)(zhi)相(xiang)(xiang)電(dian)(dian)壓(ya)(ya)電(dian)(dian)流(liu)，不(bu)(bu)可能(neng)難以將(jiang)脈(mo)沖(chong)激(ji)光漏極(ji)(ji)相(xiang)(xiang)電(dian)(dian)壓(ya)(ya)電(dian)(dian)流(liu)產(chan)生(sheng)到DUT。本(ben)數據統計操作手冊的運(yun)用(yong)有(you)些將(jiang)體現如何才能(neng)為(wei)以下的兩運(yun)用(yong)保證 該(gai)傳感器(qi)：運(yun)用(yong)應用(yong)設(she)置(zhi)(zhi)(zhi)1：進行電(dian)(dian)磁漏極(ji)(ji)偏(pian)置(zhi)(zhi)(zhi)固(gu)定(ding)不(bu)(bu)動(dong)負柵極(ji)(ji)偏(pian)置(zhi)(zhi)(zhi)。用(yong)頁面(mian)設(she)置(zhi)(zhi)(zhi)2：還具有(you)單(dan)脈(mo)沖(chong)信號漏極(ji)(ji)偏(pian)置(zhi)(zhi)(zhi)的單(dan)脈(mo)沖(chong)信號負柵極(ji)(ji)偏(pian)置(zhi)(zhi)(zhi)。這幾種(zhong)應運(yun)頁面(mian)設(she)置(zhi)(zhi)(zhi)都(dou)將(jiang)推(tui)介表(biao)面(mian)用(yong)電(dian)(dian)線路和(he)p溝道額(e)定(ding)功率(lv)MOSFET。

本質特(te)征

•  不管什么上電/跳電字段的穩盈GaN防護
•  柵極偏置輸出精度電壓電流= 50 mA，不適用來重形RF再壓縮
•  低能耗<100 mW
•  制定目標= 500 ns總按鈕開關換算事件
•  6.60 x 22.48 mm2打包封裝，帶1 mm距離SMT引線
•  全部的I / O端口號的30 dB基本特征EMI / RFI緩和
•  其他MOSFET啟閉控制的漏極串入打出感應電流= 200 mA
• &nbsp;有(you)激光脈(mo)沖(chong)漏極偏壓的放置柵極。額外(wai)模塊電源容(rong)許門單(dan)脈(mo)沖(chong)
•  適用RoHS *標準的，兼容260°C出液焊

• 正電源線輸出功率：50 
• 正交流電源工作電流：14 mA
• 負外接電源功率：-3 mA