行業內介紹
頒布事件:2024-11-18 17:03:20 觀看:754
CGHV60170D是氮化鎵(GaN)高智能電子轉至率結晶體管(HEMT)。與硅或砷化鎵不同之處較,GaN兼具非常好的的耐熱性;涉及到較高的電壓擊穿場強;達到飽和狀態電子器件偏移量加速度較高;以至于較高的傳熱系數性。與Si和GaAs結晶管相較較,CGHV60170D給予較高的馬力孔隙率和更寬的頻寬參數。

產品尺寸
舉例說明:170瓦;6.0 GHz;50VGaN HEMT單片(pian)機芯片(pian)
低些率(MHz):0
最多(duo)幀率(MHz):6000
增益值(zhi)(zhi)值(zhi)(zhi)(dB):17
裝封類目:Die
共同點
65%非常典型(xing)公率(lv)額(e)外使用率(lv)
170 W常見PSAT
50V反控
高熱擊穿場強
速率時間范圍高(gao)至6 GHz
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